发明名称 Threshold voltage measuring device for memory cells
摘要 A circuit device for measuring the threshold voltage distribution among electrically programmable, non-volatile memory cells, which device comprises a differential amplifier having a first input connected to a first circuit leg including at least one memory cell and a second input connected to a second or reference circuit leg, and circuit means effective to cause an unbalance in the values of the currents flowing in the reference leg. The device is connected between a first supply voltage reference and a second voltage reference, and said circuit means comprise a generator of a varying current as a function of the supply voltage which is associated with the reference leg.
申请公布号 US5600594(A) 申请公布日期 1997.02.04
申请号 US19950412326 申请日期 1995.03.31
申请人 SGS-THOMSON MICROELECTRONICS S.R.L. 发明人 PADOAN, SILVIA;MACCARRONE, MARCO;OLIVO, MARCO
分类号 G11C17/00;G11C29/00;G11C29/50;G11C29/56;(IPC1-7):G11C16/02 主分类号 G11C17/00
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