发明名称 |
Threshold voltage measuring device for memory cells |
摘要 |
A circuit device for measuring the threshold voltage distribution among electrically programmable, non-volatile memory cells, which device comprises a differential amplifier having a first input connected to a first circuit leg including at least one memory cell and a second input connected to a second or reference circuit leg, and circuit means effective to cause an unbalance in the values of the currents flowing in the reference leg. The device is connected between a first supply voltage reference and a second voltage reference, and said circuit means comprise a generator of a varying current as a function of the supply voltage which is associated with the reference leg.
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申请公布号 |
US5600594(A) |
申请公布日期 |
1997.02.04 |
申请号 |
US19950412326 |
申请日期 |
1995.03.31 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.R.L. |
发明人 |
PADOAN, SILVIA;MACCARRONE, MARCO;OLIVO, MARCO |
分类号 |
G11C17/00;G11C29/00;G11C29/50;G11C29/56;(IPC1-7):G11C16/02 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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