PRODUCTION OF SILICON CARBIDE WHISKER AND SILICON NITRIDE WHISKER

摘要

PROBLEM TO BE SOLVED: To extremely easily obtain a high-purity silicon carbide whisker using a simple apparatus by using an organosilicon polymer as precursor. SOLUTION: The objective silicon carbide whisker is obtained by heat treatment, in an inert gas atmosphere except nitrogen gas or a nitrogen gas atmosphere, of a molded form (e.g. a porous one) comprising an organosilicon polymer with the main chain composed of silicon atom alone and/or such a polymer with the main chain composed of both silicon and carbon atoms and solid carbon.