A PLASMA ENHANCED CHEMICAL PROCESSING REACTOR AND METHOD

摘要

A plasma enhanced chemical processing reactor (10) and method. The reactor (10) includes a plasma chamber (18) including a first gas injection manifold (15) and a source of electromagnetic energy (12). The plasma chamber is in communication with a process chamber (16) which includes a wafer support (20) and a second gas manifold (17). The plasma generated in the plasma chamber (18) extends into the process chamber (16) and interacts with the reactive gases to deposit a layer of material on the wafer (24). The reactor (10) also includes a vacuum system (26) for exhausting the reactor (10). The method includes the steps of generating a plasma within the plasma chamber (18), introducing at least one gaseous chemical into the process chamber (16) proximate to the wafer support (20) and applying r.f. gradient to induce diffusion of the plasma to the area proximate the wafer support (20).