| 摘要 |
A dielectric capacitor having excellent dielectric properties which comprises a silicon oxide layer (4), a lower electrode (12), a ferroelectric layer (8), and an upper electrode (15) formed on a silicon substrate (2). The lower electrode (12) is formed of palladium oxide, and so is the upper electrode (15). Palladium oxide prevents the permeation of oxygen through the dielectric layer (8), thus offering a dielectric capacitor having excellent dielectric properties.
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