PHOTODETECTORS USING III-V-NITRIDES

摘要

A photodetector using a III-V nitride and having predetermined electric al properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The thr ee layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows contr ol and predetermination of the electrical properties of the photodetector.