Dynamic random-access memory cell structure - has memory capacitors contained in etched channels in semiconductor surface with electrode structure supporting memory dielectric and counter-electrode

摘要

The memory cell structure has a cell field formed in the surface of a semiconductor substrate (12, each cell having at least one selection transistor and a memory capacitor, contained in an etched channel. The electrode structure (21) of the memory capacitor contains at least 2 electrically coupled elements (15,17,20) at a given relative spacing, with a storage dielectric (22) and a counter-electrode (23) at the surface of the electrode structure.