| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a ridge waveguide semiconductor laser which is low in threshold current and high in luminous efficacy. SOLUTION: An SiO2 mask 12 is formed on an N-InP substrate 11, and an etching process is carried out for the formation of a mesa stripe 11A. A high-resistance layer 13 is grown filling up each side of the mesa stripe 11A to be flush with the mesa stripe 11A. Then, the SiO2 mask 12 is removed, and then an N-InP clad layer 14, an active layer 15, a P-InP clad layer 16, and a P-InGaAsP contact, layer 17 are successively grown. Then, an SiO2 stripe mask is formed, and a ridge 18 is formed by etching. Next, an SiO2 insulating film 19 is formed on all the surface, and a window 19A is provided to only the top of the ridge 18, and a P-side electrode 20 is formed. An N-side electrode 21 is formed on the bottom of the N-InP substrate 11. By this setup, a high- resistance current, blocking layer is introduced under the active layer 15 of a ridge waveguide semiconductor laser. |
