| 摘要 |
PROBLEM TO BE SOLVED: To obtain a compound semiconductor which provides a light-emitting element having a superior luminous efficacy, by a method wherein a III-V compound semiconductor layer, the half band width of a rocking curve in the peak of a diffraction in the specified face in the X-ray diffraction of which is within a specified range, is used as a base layer for a luminous layer and the like. SOLUTION: A III-V compound semiconductor comprises a laminated structure formed by growing a second III-V compound semiconductor layer 2, which is shown in a general formula: Inx Gay Alz N and has a thickness of 10Å or thicker and 90Å or thinner, by a vapor growth method on a first III-V compound semiconductor layer 1, which is shown in a general formula: Gaa Alb N. Provided that, the (a), the (b), the (x), the (y) and the (z) are used on the conditions of a+b=1, 0<=a<=1, 0<=b<=1 and x+y+z=1, 0<=x<=1, 0<=y<=1 and 0<=z<=1. In such the III-V compound semiconductor, the half band width of a rocking curve in the peak of a diffraction in the face (0002) in an X-ray diffraction of the layer 1 is set to one smaller than 13 minutes. For example, an InGaAlN layer 2 and a P-type InGaAlN layer 3 are formed on an N-type GaAlN layer 1 to form a light-emitting diode. |
