Chemical/mechanical planarization (CMP) endpoint method using measurement of polishing pad temperature

摘要

An improved and new process for chemical/mechanical planarization (CMP) of a substrate surface, wherein the endpoint for the planarization process is detected by monitoring the temperature of the polishing pad with an infrared temperature measuring device, has been developed. The method allows endpoint to be detected in-situ at the polishing apparatus, without necessity to unload the substrate for visual inspection or performance of specialized, time-consuming, and costly thickness and/or surface topography measurements.