发明名称 |
Batch erasable nonvolatile memory device and erasing method |
摘要 |
A batch erasable nonvolatile memory device and an apparatus using the same provided with memory cells which are adapted to execute an erase operation by a ejecting an electric charge accumulated at floating gates by program operation (including a pre-write operation), carries out, in sequence, a first operation for reading memory cells of an erase unit and carrying out a pre-write operation on those nonvolatile memory cells at the floating gates of which electric charge is not stored, a second operation for carrying out a batch erase operation at a high speed for the nonvolatile memory cells of said erase unit with a relatively large energy under a relatively large erase reference voltage, a third operation for carrying out a read operation of said all erased nonvolatile memory cells and a write operation on those nonvolatile memory cells which are adapted to have a relatively low threshold voltage, and a fourth operation for carrying out a batch erase operation at a low speed for the nonvolatile memory cells of said erase unit with a relatively small energy under a relatively small erase reference voltage, or is provided with an automatic erasing circuit for executing these operations.
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申请公布号 |
US5598368(A) |
申请公布日期 |
1997.01.28 |
申请号 |
US19950445105 |
申请日期 |
1995.05.19 |
申请人 |
HITACHI, LTD.;HITACHI ULSI ENGINEERING CORP.;HITACHI TOHBU SEMICONDUCTOR, LTD. |
发明人 |
TAKAHASHI, MASAHITO;ODAGIRI, MICHIKO;FURUNO, TAKESHI;FURUSAWA, KAZUNORI;WADA, MASASHI |
分类号 |
G11C17/00;G11C16/02;G11C16/16;G11C16/34;(IPC1-7):G11C13/00 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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