发明名称 Thin-film transistor with wide gate electrode and liquid crystal display incorporating same
摘要 A thin-film transistor for connecting a signal electrode line to a pixel electrode of a liquid crystal display, the thin-film transistor including: a substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode; a semiconductor layer formed on the gate insulating layer; an ohmic contact layer formed on the semiconductor layer; a source electrode formed on the ohmic contact layer over a first end of the semiconductor layer; a drain electrode formed on the ohmic contact layer over a second end of the semiconductor layer such that a channel region is formed; and a protective film formed on the gate insulating layer, the source electrode, the channel region of the semiconductor layer, and the drain electrode. A width of the gate electrode is wider than a width of the semiconductor layer. The pixel electrode is connected to the drain electrode through a first hole in the protective film, and the signal electrode line is connected to the source electrode through a second hole in the protective film.
申请公布号 US5598012(A) 申请公布日期 1997.01.28
申请号 US19950534612 申请日期 1995.09.27
申请人 FRONTEC INCORPORATED 发明人 HEBIGUCHI, HIROYUKI
分类号 H01L23/482;H01L29/786;(IPC1-7):H01L29/04 主分类号 H01L23/482
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