| 摘要 |
PROBLEM TO BE SOLVED: To obtain a photovoltaic element, which is low-cost suitable to practical use, has a high reliability and is high in photoelectric conversion efficiency, by a method wherein after a doped layer, which is positioned under an I-type semiconductor layer, is formed, the surface of the doped layer is exposed to plasma containing a specified element before the semiconductor layer is formed. SOLUTION: A photovoltaic element has a structure, which is formed by laminating two doped layers, which consist of P-type and N-type semiconductor layers 105 and 103, via an I-type semiconductor layer 104 and forms a P-I-N semiconductor junction. The crystal form of the doped layer D103, which is positioned under at least the layer 104, is a non-single crystal. In the case where such a photovoltaic element is, manufactured, after the layer D103 is formed and before the layer 104 is formed, the surface of the layer 103 is exposed to plasma containing an element α, which enlarges the band gap of the layer D103. As the element α, for example, carbon, oxygen, nitrogen and the like are used. |
