| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor memory device which realizes a large on-state current while a current is being maintained under a low voltage by a method wherein a conductive layer is formed in such a way that it becomes a Vcc potential in a standby state and that it becomes a GND potential in an active state. SOLUTION: A driver transistor Q1 is provided with one pair of source/drain regions 23a, 23b, with a gate insulating layer and with a gate electrode layer 21a. The pair of source/drain regions 23a, 23b are composed of an n-type diffusion region, and they are arranged by keeping a prescribed distance so as to prescribe a channel region. The gate electrode layer 21a is formed so as to face the channel region by interposing the gate insulating layer. Then, a variable voltage plate(VVP) 1 is installed on the rear side of channels of thin-film transistors to be used as load transistors Q5, Q6. The VVP 1 is connected electrically to a VPP voltage (Vvvp) generation circuit 72. Thereby, the VVP 1 becomes a GND potential in an active state and a Vcc potential in a standby state. |
