| 摘要 |
PROBLEM TO BE SOLVED: To provide a method in which problems by conventional techniques are solved or at least reduced and in which a buried layer is formed inside a substrate. SOLUTION: In a method, an integrated circuit which is provided with a lightly doped buried layer 2 having a conductivity type and with a heavily doped buried layer 3 having the same conductivity type is manufactured. In the method, a substrate 1 is masked in order to define opening regions in places in which the two buried layers are to be formed on the substrate, an opening part on the substrate is doped with a low-concentration dopant, and the lightly doped buried layer 2 is formed. Then, one opening region in which the lightly doped buried layer 2 is formed is masked, another opening region is doped with a high-concentration dopant, and the heavily doped buried layer 3 is formed.
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