| 摘要 |
PROBLEM TO BE SOLVED: To provide a photovoltaic element, which is low-cost suitable to practical use, has a high reliability and is high in photoelectric conversion efficiency, and a method of manufacturing the element by a method wherein the structure of a new doped layer and a method of forming the doped layer are introduced in the method of manufacturing the photovoltaic element. SOLUTION: In a method of manufacturing a photovoltaic element of a structure, wherein the element has a structure, which is formed by laminating two doped layers, which consist of P-type and N-type semiconductor layers 105 and 103, via an I-type semiconductor layer 104 and forms a P-I-N semiconductor junction, and the crystal form of the doped layer D, which is positioned on at least the layer 104, is a non-crystal material, when an element, which enlarges the band gap of the layer D, and a valence electron control agent of the same type as that of the layer D are respectively assumed α and β, the surface of the layer D is exposed to plasma containing the element α and the valence electron control agent β after the layer D is formed on the layer 104. |
