| 摘要 |
In a method for manufacturing an LDD type semiconductor device, an insulating layer is formed on a semiconductor substrate of a first conductivity type, and an opening is formed in the insulating layer. Then, a first sidewall insulating layer is formed on a sidewall of the insulating layer, and a gate insulating layer is formed on the semiconductor substrate. Then, a gate electrode is buried in the opening. Then, the first sidewall insulating layer is removed, and impurities of a second conductivity type are introduced into the semiconductor substrate to form a low concentration impurity region in the semiconductor substrate. Then, the insulating layer is removed, and a second sidewall insulating layer is formed on a sidewall of the gate electrode. Finally, impurities of the second conductivity type are introduced into the semiconductor substrate to form a high concentration impurity region in the semiconductor substrate.
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