| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the electric resistance and reliability of signal wirings disposed in an active matrix display device integrated and formed with thin-film transistors(TFTs) of a bottom gate type. SOLUTION: The active matrix display device has a driving substrate 1 and a counter substrate 2 joined via a prescribed spacing. Liquid crystals 3 are held in the spacing between both. The TFTs 4, pixel electrodes 5 and signal wirings 6 are integrated and formed on the driving substrate 1. Counter electrodes 7 are formed on the counter substrate 2. The TFTs 4 have a bottom gate structure and has gate electrodes G patterned and formed on the driving substrate 1, gate insulating films 9, 10 coating the gate electrodes G and semiconductor films 11 patterned and formed on the gate insulating films 9, 10. The signal wirings 6 have a laminated structure superposed with a lower metallic layer 13 and an upper metallic layer 14. The lower metallic layer 13 consists of aluminum and has the relatively low electric resistance and relatively small physical strength. The upper metallic layer 14 consists of molybdenum and coats the lower metallic layer 13.</p> |
