Semiconductor integrated circuit for preventing deterioration of the characteristics of an N-channel type transistor

摘要

In a semiconductor integrated circuit constructed by thin film transistors (TFTs), an invertor circuit or a NAND circuit is formed by arranging a transmission gate circuit, a P-channel type TFT or an N-channel type TFT between a circuit including at least one P-channel type TFT and a circuit including at least one N-channel type TFT. The N-channel type TFT is earthed. Voltage drop produces by the arranged transmission gate circuit or P-channel or N-channel type TFT, so that the drain voltage of the earthed N-channel type TFT is decreased and an electric field near the drain region of the N-channel type TFT is decreased.