| 摘要 |
FIELD: semiconductor engineering; manufacture of semiconductor power devices, such as pellet silicon resistors of high temperature resistance. SUBSTANCE: semiconductor power resistor has resistance unit in the form of single-crystalline n-type silicon disk that incorporates radiation defects with concentration of $$$ for silicon having resistivity $$$ = 700 Ohm cm to $$$ for silicon having resistivity $$$ = 150 Ohm cm; these defects are obtained by irradiating resistance unit with accelerated electrons of 2-5 MeV energy, dose rate of $$$ for silicon having resistivity $$$ = 700 Ohm cm to $$$ for silicon of resistivity $$$ = 150 Ohm cm, this being followed by heat-stabilizing annealing. EFFECT: improved thermal stability of semiconductor resistor in working temperature range, facilitated manufacture. 2 cl, 2 dwg, 4 tbl |
