| 摘要 |
PURPOSE:The first insulator layer of thickness T is provided between a semiconductor substrate and each electrode of the first electrode group, and the first and seconnd insulator layers of T+ T' thick are installed under each electrode of the second electrode group respectively. As a result, a storage region is formed under each of the first electrodes, and a transfer region featuring a higher threshold voltage than the strage region is ormed under each of the second electrodes. Thus, an electric charge transfer device which is sutably applied for a ailid state pickup unit can be obtained. |
