| 摘要 |
PROBLEM TO BE SOLVED: To make better the distribution of film thickness and to reduce the number of the generation of particles by specifying the crystal orientation- containing ratio in each part of a target calculated in accordance with a specified formula. SOLUTION: As for a high purity titanium sputtering target, the crystal orientation-containing ratio in each part of a target measured by an X-ray diffraction method in the sputter face of the target and calculated in accordance with the formula is regulated to >=70%. In the formula, I(hk1) denotes the peak intensity in the (hk1) plane obtd. by the X-ray diffraction method and I*(hk1) denotes the relative intensity ratio (See JCPDS Card). The dispersion of the crystal orientation-containing ratio in each part to the crystal orientation- containing ratio obtd. by leveling the whole body of the target is preferably regulated to±20%. Thus, the film forming rate can be increased, and bottom coverage characteristics can be made better.
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