A vapour phase growth appts. has a chamber provided with a reaction gas inlet/outlet pipe and contg. a wafer holder (1) having a recessed surface on which a wafer is positioned horizontally and in which a cavity (3) is locally formed, the wafer holder being rotated by a drive and the wafer being heated by a heater at the back side of the holder. The rise in wafer surface temp. is suppressed in the region above the cavity in order to provide a uniform wafer surface temp. Also claimed are similar appts. in which (a) the cavity is formed locally at the back side of the recessed surface; or (b) the cavity is replaced by a protrusion formed on the back side of the recessed surface causing wafer surface temp. increase in the protrusion region so that the difference between the surface temp. of the wafer holder (excluding the recessed surface) and the wafer is reduced, resulting in uniform wafer surface temp. Further claimed are cpd. semiconductor devices produced by the above appts.
