| 摘要 |
<p>A semiconductor device which has a pMOS-TFT structure, and operates stably. The area occupied by the semiconductor device is still small. A method of manufacturing the semiconductor device is also disclosed. A gate electrode is formed on an insulating layer and a gate insulating film is formed on the surface of the insulating layer including the gate electrode. A polysilicon layer is formed on the surface of the gate insulating film. In the polysilicon layer, a source region is formed at one end portion of a channel region and a drain region is formed at the other portion, with a low-concentration impurity diffused region therebetween. A wiring layer through which a voltage applied to the source region is supplied to the channel region is formed on the surface of the source region and channel region.</p> |
