发明名称 POWER SEGMENTED ELECTRODE
摘要 A power segmented electrode useful as part of an upper electrode and/or substrate support for supporting a substrate such as a semiconductor wafer in a plasma reaction chamber such as a single wafer etcher. The power segmented electrode includes a plurality of electrodes which are supplied radiofrequency power in a manner which provides uniform processing of the substrate. The power to the electrodes can be supplied through a circuit incorporating interelectrode gap capacitance, one or more variable capacitors, one or more current sensors, a power splitter, one or more DC biasing sources, and/or power amplifier.
申请公布号 WO9702589(A1) 申请公布日期 1997.01.23
申请号 WO1996US10805 申请日期 1996.06.20
申请人 LAM RESEARCH CORPORATION;DIBLE, ROBERT, D.;LENZ, ERIC, H.;LAMBSON, ALBERT, M. 发明人 DIBLE, ROBERT, D.;LENZ, ERIC, H.;LAMBSON, ALBERT, M.
分类号 H05H1/46;H01J37/32;H01L21/302;H01L21/3065;H01L21/683;(IPC1-7):H01J37/32 主分类号 H05H1/46
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