| 摘要 |
<p>A semiconductor integrated circuit device comprising an SOI substrate (5) that includes a semiconductor layer (5c) deposited on an insulating layer (5b) formed over a semiconductor substrate (5a). The insulating layer (5b) is selectively removed immediately below the p-n junctions of input protective diodes D1, D2 to remove heat and static charges from the diodes by conducting them directly to the semiconductor substrate (5a).</p> |
