| 摘要 |
The invention concerns a semi-conductor component in which a zone (3) is produced in a semi-conductor substrate (1, 2) and forms therewith a PN junction. A cover electrode (6) and a highly doped zone (4) are provided in the region of the developing space charge zone. The cover electrode (6) is connected to a voltage divider (Z1, R1, Z2, R2, TR) whereby the potential of the cover electrode (6) is adjusted so as to be temperature-compensated.
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| 申请人 |
ROBERT BOSCH GMBH, 70469 STUTTGART, DE |
发明人 |
MICHEL, HARTMUT, DIPL.-ING., 72762 REUTLINGEN, DE;PLUNTKE, CHRISTIAN, DR.RER.NAT. DR., 72379 HECHINGEN, DE;GOERLACH, ALFRED, DIPL.-PHYS., 72127 KUSTERDINGEN, DE |
