Verfahren zur Herstellung von Beschleunigungssensoren

摘要

The invention concerns a method of producing acceleration sensors using a silicon layer which is deposited in an epitaxial system. The material grows in the form of a polysilicon layer (6) with a given degree of surface roughness above sacrificial layers (2) applied to the carrier (1). The surface roughness is eliminated by applying a photosensitive resist and a post-etching process. Alternatively, chemical-mechanical smoothing can be performed.