| 发明名称 |
THYRISTOR WITH A LAYER OF CHARGE CARRIERS HAVING A REDUCED LIFETIME |
| 摘要 |
A thyristor, in particular a GTO, has a high recombination rate zone (ZHR) generated over a large surface of its n-base (3, 3') by irradiation with protons or helium nuclei at the anode side. The charge carrier lifetime is not homogeneous in the vertical direction and the site where the charge carriers are diminished in the n-base is near the p<+>-emitter. |
| 申请公布号 |
WO9702603(A1) |
申请公布日期 |
1997.01.23 |
| 申请号 |
WO1996DE01052 |
申请日期 |
1996.06.13 |
| 申请人 |
SIEMENS AKTIENGESELLSCHAFT;SCHULZE, HANS-JOACHIM |
发明人 |
SCHULZE, HANS-JOACHIM |
| 分类号 |
H01L21/332;H01L29/10;H01L29/32;H01L29/74;H01L29/744 |
主分类号 |
H01L21/332 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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