Three=dimensional defect analysis method for semiconductor wafer

摘要

The method involves applying a photo resist or photo lacquer film (3) to a passivation layer except for a predetermined section of the layer in which the section containing the defect (X) is located. A vinyl film (4) is then deposited on the photo resist and the side of the wafer and the exposed passivation layer is removed from one of the metallic connections as is an isolating layer between them. With a scanning electron microscope used for surfaces the defects present in the metal connections which remain after etching the passivation and insulating layers are inspected. For this inspection the slope and/or angle of rotation of the wafer is varied under the microscope.