SEMI-INSULATING WAFER

摘要

A bonded wafer (10) has a silicon device layer (20) bonded to a layer of semi-insulating material (14), preferably a mobility degraded silicon such as polycrystaline silicon. Layer (14) is thick enough and substrate (16) is conductive enough to reduce resistive losses when devices in layer (20) are operated at frequencies above 0.1 GHZ. Substrate (16) is conductive enough and semi-insulating material (14) is resistive enough to prevent cross-talk among devices in layer (20).