| 发明名称 |
High power MOS guided devices and methods of manufacturing them |
| 摘要 |
<p>In a method of manufacturing a power transistor such as an IGBT, MOSFET or MCT the emitter of each cell is recessed and has an overlay metallisation, there being a silicide layer lining the walls of each recess and electrically interconnecting the source and body diffusions of the device. <IMAGE></p> |
| 申请公布号 |
EP0755077(A2) |
申请公布日期 |
1997.01.22 |
| 申请号 |
EP19960305130 |
申请日期 |
1996.07.12 |
| 申请人 |
PLESSEY SEMICONDUCTORS LIMITED |
发明人 |
WAIND, PETER RAWSON;SADLER, DAVID NEIL;THOMSON, JAMES;KERR, JOHN ANTHONY |
| 分类号 |
H01L21/285;H01L21/28;H01L21/331;H01L21/332;H01L21/336;H01L29/08;H01L29/417;H01L29/45;H01L29/739;H01L29/74;H01L29/749;H01L29/78;(IPC1-7):H01L29/739 |
主分类号 |
H01L21/285 |
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