| 摘要 |
In a method for producing a semiconductor device including etching an Al x Ga 1-x As (0 * less than or equal to * x * less than or equal to * 1) layer by a dry etching method, an etchant gas is used containing chlorine, a group V gas, and a hydrogen gas which are supplied at the same time, and said gas etching is carried out under conditions that a partial pressure of said group V gas is in a range from 8 x 10 -3 Torr to 0.08 Torr and the flow rate of said group V gas to said etching gas is lower than 2.5. A stripe-shaped SiN mask 21 extends along the [0 1 1] direction to produce a ridge structure with planes 24, 25. Alternatively, if the mask 21 extends along the [011] direction, a single sloping plane is produced. |
