Method of producing dielectric thin film element

摘要

An oxide dielectric thin film is obtained by sputtering. After the formation of the oxide dielectric thin film, the evacuation of the film forming chamber is suspended, without taking the sample out of the film forming chamber. Oxygen gas is introduced into the film forming chamber so that the pressure is 200 Pa. After the sample is kept in the oxygen gas for 5 minutes at a temperature of 350 DEG C, it is cooled down in the same atmosphere of oxygen at a cooling speed of 3 DEG C/min.