| 摘要 |
A semiconductor device comprising a first insulating film substrate 12 having a high frequency semiconductor chip 2 and circuit elements 3a, 3b, 3g connected to said semiconductor chip 2 disposed on a surface and a second insulating film substrate 10 having a circuit element 15 on a rear surface; wherein said surface or said rear surface of said first film substrate 12 is opposite to a surface of said second film substrate 10, these two film substrates are mutually electrically connected via through holes 43 to 45; said first film substrate 12 and said second film substrate 10 are laminated and mutually electrically connected, and the first and second substrates are moulded with resin 8. |
