| 摘要 |
PROBLEM TO BE SOLVED: To control remaining thickness in selective etching with an excellent repeatability, in the method of manufacturing the compound semiconductor element by crystal growth with metal organic vapor phase growth. SOLUTION: After a gas etching a substrate (a clad layer 4 that is integrated with the substrate) selectively with organic V group materials having a dimethylamino group or a diethylamino group, in a reaction chamber, the compound semiconductor layers 9, 10 and 11 are crystal grown selectively on the gas etched region of the clad layer 4 with the metal organic vapor phase growth in the reaction chamber continuously. |
