| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method by which a micromachined highly reliable semiconductor device can be manufactured by easily and effectively suppressing the rounding and thinning of the end sections of gate electrodes without relying on the lithography, exposing lighting system, resist, masking technique, or mask pattern designing technique. SOLUTION: In a method by which a semiconductor device in which the end sections of gate electrodes are formed in an element separating area by using lithography, an exposing process in which a mask 8 which is laid out so that the width in the channel direction of the part of the mask 8 corresponding to the end section of the gate electrode can become wider than that in the same direction of a gate electrode in an active area. |
