发明名称 |
Method and apparatus for reading/writing data from/into semiconductor memory device |
摘要 |
A method and an apparatus for reading/writing data from/into a semiconductor memory device. In a read mode, a memory cell array block from which data is to be read is selected in response to a row address signal and a column of the selected memory cell array block is selected in response to a column address signal. Data are transferred from a memory cell of the selected column to a pair of bit lines of the selected column and then sense-amplified. A read signal is decoded and a pair of column decoding lines of the selected column become a desired logic state in accordance with the decoded result. A current path is formed between one of the column decoding lines and a ground terminal in response to the sense-amplified data on the bit lines. Data on the column decoding lines are selected and sense-amplified. The sense-amplified data are transferred externally. In a write mode, a memory cell array block into which data is to be written is selected in response to the row address signal and a column of the selected memory cell array block is selected in response to the column address signal. A pair of column decoding lines of the selected column become a desired logic state in response to a write signal. Data on one of the column decoding lines is transferred to a bit line sense amplifier connected to a memory cell of the selected column.
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申请公布号 |
US5596533(A) |
申请公布日期 |
1997.01.21 |
申请号 |
US19960626549 |
申请日期 |
1996.04.02 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
PARK, KEE W. |
分类号 |
G11C11/413;G11C7/10;G11C8/10;G11C11/407;G11C11/408;G11C11/409;G11C11/4096;(IPC1-7):G11C7/00;G11C8/00 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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