发明名称 |
SEMICONDUCTOR MEMORY AND ITS TRANSMISSION LINE FORMATION |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming the transmission line of a semiconductor memory capable of suppressing a skew between signals and being advantageous for a higher speed operation. SOLUTION: If a deviation occurs between signal transmitting times due to the different lengths of many transmission lines 16a to 16h for transmitting signals from a first circuit group having internal circuits 12a to 12h to a second circuit group having internal circuits 14a to 14h, load lines 18a to 18h are additionally connected to the transmission lines to make the load amounts uniform. |
申请公布号 |
JPH0922989(A) |
申请公布日期 |
1997.01.21 |
申请号 |
JP19960107722 |
申请日期 |
1996.04.26 |
申请人 |
SAMSUNG ELECTRON CO LTD |
发明人 |
RI KOUTETSU;CHIYOU KENJIYUN |
分类号 |
G11C11/41;G11C7/22;G11C11/407;G11C11/409;H01L21/8242;H01L27/108 |
主分类号 |
G11C11/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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