发明名称 SEMICONDUCTOR MEMORY AND ITS TRANSMISSION LINE FORMATION
摘要 PROBLEM TO BE SOLVED: To provide a method for forming the transmission line of a semiconductor memory capable of suppressing a skew between signals and being advantageous for a higher speed operation. SOLUTION: If a deviation occurs between signal transmitting times due to the different lengths of many transmission lines 16a to 16h for transmitting signals from a first circuit group having internal circuits 12a to 12h to a second circuit group having internal circuits 14a to 14h, load lines 18a to 18h are additionally connected to the transmission lines to make the load amounts uniform.
申请公布号 JPH0922989(A) 申请公布日期 1997.01.21
申请号 JP19960107722 申请日期 1996.04.26
申请人 SAMSUNG ELECTRON CO LTD 发明人 RI KOUTETSU;CHIYOU KENJIYUN
分类号 G11C11/41;G11C7/22;G11C11/407;G11C11/409;H01L21/8242;H01L27/108 主分类号 G11C11/41
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