发明名称 Circuit including DRAM and voltage regulator, and method of increasing speed of operation of a DRAM
摘要 An integrated circuit comprising a reference voltage generator having an output providing a reference voltage; a selectively engageable filter having an input connected to the output of the reference voltage generator, and having an output; a voltage regulator having an input connected to the output of the filter, and having an output; a dynamic random access memory receiving power from the output of the voltage regulator, the dynamic random access memory having memory cells that are accessed or refreshed in response to a first signal; and a timing circuit which engages the filter in response to presence of a first signal, and causes the filter to filter the reference voltage. A method of increasing the speed of operation of an integrated circuit including a dynamic random access memory having memory cells which are individually accessed in response to a signal, including a reference voltage generator having an output, and including a voltage regulator which accepts the output of the reference voltage generator and supplies voltage to the dynamic random access memory, the method comprising filtering the output of the reference voltage generator in response to the signal.
申请公布号 US5596534(A) 申请公布日期 1997.01.21
申请号 US19950495338 申请日期 1995.06.27
申请人 MICRON TECHNOLOGY, INC. 发明人 MANNING, TROY A.
分类号 G11C5/14;G11C11/4074;(IPC1-7):G11C11/403 主分类号 G11C5/14
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