| 摘要 |
PROBLEM TO BE SOLVED: To make the effective inductance of a metal interconnection connecting an electrode pad on a semiconductor chip to an inner lead on a package zero in order to realize a wire bonding-type high-speed semiconductor device in which a noise and a crosstalk noise due to a simultaneous switching operation are small. SOLUTION: Electrode pads on a semiconductor chip are arranged alternately in the order of electrode pads for a power supply, at least one electrode pad for a signal and electrode pads for a ground. Metal thin wires 4 which connect the electrode pads to internal terminals are formed in such a way that one metal thin wire for the power supply, one metal wire for the ground and a metal thin wire, for the signal, which is sandwiched between the metal thin wire for the power supply and the metal thin wire for the ground form one set, and the metal thin wires are wire-bonded in such a way that they are nearly parallel and that their length is nearly identical. When the metal thin wires as one set are arranged in a width of within 700μm, an effect is large. When an interconnection for a power supply system and an interconnection for a ground system are put together from the internal terminals up to external terminals so as to reduce the number of external terminals, the compatibility of a wire bonding-type semiconductor device with a conventional semiconductor device can be ensured regarding a mounting property. |
