| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor ceramic which has a high inrush breakdown voltage and whose layer-shaped crack cannot easily occur. SOLUTION: In a semiconductor ceramic with positive resistance temperature characteristics, the resistance in a particle occupying in a resistance is set to 20% or less without including 0% for the resistance in the crystal particle for determining the resistance of the semiconductor ceramic and the grain boundary resistance between crystal particles. |
