发明名称 MAGNETO-RESISTANCE EFFECT ELEMENT AND ITS MANUFACTURE, AND MAGNETIC RECORDER AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To prevent the magnetizing direction of a second soft-magnetic layer from being deviated from a fixed direction and to hold the linearity of a change in the resistance over a wide area of a signal magnetic field by successively laminating an antiferromagnetic layer, first soft-magnetic layer, the second soft-magnetic layer and forming the first soft-magnetic layer in such a way that the width of the first soft-magnetic layer is made wider than that of the second one. SOLUTION: The antiferromagnetic layer 12 of a magneto-resistance effect element 16 forms a 20 to 30nm thick NiMn film on an AlTiC substrate 11a, and the first soft-magnetic layer 13 is constituted of a 5 to 30nm thickness NiFe film, Co film or Co-base alloy film. Then, a non-magnetic metallic layer 14 is constituted of a 2 to 3nm thick Cu film. Further, the second soft-magnetic layer 15, which is constituted of a 5 to 10nm thick NiFe film, is succesively laminated. Then, the widths in the longitudinal direction from a plane corresponding to a magnetic recording medium are controlled to 4μm for the antimagnetic layer 12 and first soft-magnetic layer 13, and 1.5μm for the non-magnetic metallic layer 14 and second soft-magnetic layer 15 respectively. By such a constitution, the linearity of a change in resistance over a wide area of the signal magnetic field is held.
申请公布号 JPH0922510(A) 申请公布日期 1997.01.21
申请号 JP19950169500 申请日期 1995.07.05
申请人 FUJITSU LTD 发明人 AOSHIMA KENICHI
分类号 G11B5/39;(IPC1-7):G11B5/39 主分类号 G11B5/39
代理机构 代理人
主权项
地址
您可能感兴趣的专利