发明名称 VOLTAGE CONVERTING CIRCUIT OF SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To minimize transient DC voltage generated at transition of an input signal, and to suppress power consumption and to attain a high speed response by preparing an auxiliary control device to be driven in accordance with an input signal to control the control terminal of an active load. SOLUTION: When an input signal IN is an 'H' level, an NMOS transistor(TR) 10 is turned to a conductive state and an NMOS TR 20 is turned to a non-conductive state due to inversion by an inverter 25. A PMOS TR 70 receiving the input signal IN by its gage is turned to a non-conductive state and a PMOS TR 60 receiving the inverted input signal, the inverse of IN, by its gate is turned to a conductive state. Thereby a node N5 is sufficiently charged by a VPP in an auxiliary control device 100 in addition to the charge of a control node N2 by a PMOS TR 15. Since the influence of a coupling effect of gate voltage is also suppressed, the TR 5 is extremely quickly turned to a non-conductive state, a node N1 is quickly discharged, the logic of the node N2 is quickly defined, and the output OUT of a booster Vpp is extracted. Also when the signal IN is in an 'L' level, similar operation is executed.</p>
申请公布号 JPH0923150(A) 申请公布日期 1997.01.21
申请号 JP19960171146 申请日期 1996.07.01
申请人 SAMSUNG ELECTRON CO LTD 发明人 KIN SHIYOUZEN
分类号 H01L21/8238;G11C5/14;G11C11/407;H01L27/092;H03K19/0185;H03K19/0948;(IPC1-7):H03K19/018;H03K19/094;H01L21/823 主分类号 H01L21/8238
代理机构 代理人
主权项
地址