| 发明名称 |
Magnetoresistive structure with alloy layer having two substantially immiscible components |
| 摘要 |
A magnetoresistive layered structure having a pair of magnetoresistive, anisotropic ferromagnetic thin-films separated by an intermediate layer on a substrate of less than 50 ANGSTROM thickness formed of a substantially nonmagnetic, conductive alloy having two immiscible components therein.
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| 申请公布号 |
US5595830(A) |
申请公布日期 |
1997.01.21 |
| 申请号 |
US19940232324 |
申请日期 |
1994.04.25 |
| 申请人 |
NONVOLATILE ELECTRONICS, INCORPORATED |
发明人 |
DAUGHTON, JAMES M. |
| 分类号 |
H01F10/30;G01R33/09;G11B5/39;H01F10/08;H01F10/32;H01L21/8246;H01L27/22;H01L43/08;H01L43/10;(IPC1-7):G11B5/66 |
主分类号 |
H01F10/30 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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