发明名称 INTERCONNECTION STRUCTURE TO PT ELECTRODE ON SIC
摘要 PROBLEM TO BE SOLVED: To eliminate the release of a Pt electrode from SiC without deteriorating the resistivity of the electrode when an interconnection material having heat resistance is provided at the electrode and used in a high-temperature environment. SOLUTION: The structure for interconnecting a Pt electrode 12 formed on SiC 11 is provided. An Au layer 13 and a nitride layer 14 like TiNx are sequentially formed in this order on the electrode 12, and an interconnection material 15 made of a high melting point metal like Mo, W or its silicide is connected to the layer 14.
申请公布号 JPH0922922(A) 申请公布日期 1997.01.21
申请号 JP19950168736 申请日期 1995.07.04
申请人 MITSUBISHI MATERIALS CORP;CHIKYU KANKYO SANGYO GIJUTSU KENKYU KIKO 发明人 KAMIYAMA EIJI;FUSEGAWA KAZUHIRO;ITO TERUZO;TOMIYAMA YASUYOSHI
分类号 H01L29/43;H01L21/28;H01L21/3205;H01L21/60;H01L23/52 主分类号 H01L29/43
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