发明名称 |
INTERCONNECTION STRUCTURE TO PT ELECTRODE ON SIC |
摘要 |
PROBLEM TO BE SOLVED: To eliminate the release of a Pt electrode from SiC without deteriorating the resistivity of the electrode when an interconnection material having heat resistance is provided at the electrode and used in a high-temperature environment. SOLUTION: The structure for interconnecting a Pt electrode 12 formed on SiC 11 is provided. An Au layer 13 and a nitride layer 14 like TiNx are sequentially formed in this order on the electrode 12, and an interconnection material 15 made of a high melting point metal like Mo, W or its silicide is connected to the layer 14. |
申请公布号 |
JPH0922922(A) |
申请公布日期 |
1997.01.21 |
申请号 |
JP19950168736 |
申请日期 |
1995.07.04 |
申请人 |
MITSUBISHI MATERIALS CORP;CHIKYU KANKYO SANGYO GIJUTSU KENKYU KIKO |
发明人 |
KAMIYAMA EIJI;FUSEGAWA KAZUHIRO;ITO TERUZO;TOMIYAMA YASUYOSHI |
分类号 |
H01L29/43;H01L21/28;H01L21/3205;H01L21/60;H01L23/52 |
主分类号 |
H01L29/43 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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