| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique with which a compound semiconductor is prevented from being destructed at handling in each manufacture process, when a semiconductor device is manufactured with the use of the compound semiconductor. SOLUTION: On a desired face (for example, a side face 1B and a rear face 1C) of a substrate 1 which includes an n-type channel layer 2 and consists of GaAs, a substrate destruction prevention film 3 consisting of Al of about 30μm thickness is formed for reinforcing the substrate 1. Then, with the use of the substrate 1 on which the substrate destruction prevention film 3 is formed, a series of processes are performed by supplying it to each manufacture process, for forming an arbitrary semiconductor element on the n-type channel layer 2.
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