| 摘要 |
PROBLEM TO BE SOLVED: To provide a quantum barrier layer in an active layer so as to suppress electrons overflowing a p-type clad layer from the active layer when a semiconductor light emitting element operates at a high temperature and, at the same time, to suppress the dropping of the optical output of the element at a high temperature without hindering the hole injecting efficiency to the active layer from the p-type clad layer. SOLUTION: An n-type GaAs buffer layer 2, an n-type clad layer 3, an active layer 4, a p-type clad layer 5, a p-type cap layer 6, an SiO2 layer 7, and a p-type electrode 8 are successively formed on an n-type GaAs substrate 1 having an n-type electrode 9. Then a ridge area 10 is formed on an active area 11 side and a reflection preventing film 13 is formed on the end faces of the active area 11 and an absorption area 12. The active layer 4 is formed by laminating well layers 4b11 , 4b12 , and 4b13 , 4b21 , 4b22 , 4b23 , and 4b24 , and 4b31 , 4b32 , and 4b33 , barrier layers 4a21 and 4a22 , barrier layers 4a31 , 4a32 , 4a33 , 4a34 , and 4a35 , and barrier layers 4a23 . and 4a24 . upon another between barrier layers 4a11 and 4a12 . |
