DEVICE FOR PRODUCTION SILICON SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a device for producing a silicone single crystal by a MCZ (Magnetic field applied Czochralski) method, capable of preventing an operator from the danger of exposure to a magnetic field without accompanying the enlargement of the device. SOLUTION: In a device for producing a silicon single crystal by a MCZ method, a growth control device 8 for controlling a lifting device is disposed at a place apart from the lifting device only by a prescribed distance so that the strength of a magnetic field just near to the growth control device 8 is <=300 gauss. A monitor camera 7 for observing the growth state of the single crystal is disposed above the window 5a of a growth oven 5, and the monitor camera is communicated with the motor of a growth oven control device to enable the remote control of the lifting device with the growth oven control device. In a test example, the integrated exposure value of the magnetic field just near to the growth oven control device can be reduced up to <20% of the allowable maximum value and thereby enables to continue the extremely safe operation.