发明名称 COMPENSATION METHOD FOR SAMPLE SURFACE HEIGHT IN ELECTRON BEAM EXPOSURE PROCESS
摘要 PROBLEM TO BE SOLVED: To expose a high accurate pattern, by dividing the surface of a sample according to irregularity of the surface of sample, measuring height from a reference plane for each area, and then exposing with the use of a correction factor wherein correction according to the height from the reference plane is added to a correction factor of a deflecting system of the reference plane, for simpler device. SOLUTION: A sample such as a glass substrate, etc., is mounted to a holder 1 provided with a reference mark, and then, with a laser displacement sensor 2, provided on the outside of an electron beam exposure device 3, height of the reference mark and heightΔH of each surface of the sample from the reference mark are measured on the outside of a chamber of the electron beam exposure device 3. These are inputted into a calculator, and, a correction factor of a part corresponding to the height differenceΔH is found from a relational expression relating to difference found in advance by experiment based on the measured value, with a correction factor at a reference plane, and the correction factors in each position are stored in a memory of a control part, and relating to the data, the basic data of a deflecting system is multiplied with the correction factor, and further, other correction is added for inputting into a deflection system amplifier, and then exposed.
申请公布号 JPH0922859(A) 申请公布日期 1997.01.21
申请号 JP19950168451 申请日期 1995.07.04
申请人 FUJITSU LTD;FUJITSU VLSI LTD 发明人 YAMADA KEIJI
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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