| 摘要 |
FIELD: electronics, design of electronically-programmable read-only memory units which are programmed by injection of hot charge carriers. SUBSTANCE: memory gate is designed as transistor of metal-dielectric-semiconductor structure with side spacer gate. Structure of SiO2-SiN4-SiO2 is used as dielectric under side gate. Due to low spacer width the region of injection of hot vacancies in under-gate dielectric overlaps catching region of negative information charge. This results in increased efficiency of clearing and cycle-stability of memory gate. Said memory gate is used in design of storage unit which provides possibility of individual access in all operation modes and which is protected against change in logical state of non-accessed memory gates when information is stored and cleared. EFFECT: increased information density, increased clearing efficiency. |
